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| GaAs 50 dB IC Voltage Variable Dual Control Attenuator DC-3 GHz AT002N5-01, AT002N5-10 Features I Dual Control Voltages I Low Insertion Loss I 7 Lead Hermetic Package I Capable of Meeting MIL-STD Requirements5 -01 0.220 (5.59 mm) 0.210 (5.33 mm) 0.063 (1.60 mm) TYP. 0.130 (3.30 mm) TYP. 0.130 (3.30 mm) TYP. 0.268 (6.81 mm) 0.252 (6.40 mm) 0.45 (1.14 mm) TYP. 0.160 (4.06 mm) 0.120 (3.05 mm) 0.031 (0.79 mm) MAX. 0.013 (0.33 mm) 0.007 (0.18 mm) 0.007 (0.18 mm) 0.003 (0.08 mm) 0.065 (1.65 mm) MAX. Description The AT002N5-01 is a GaAs IC FET absorptive attenuator. It provides up to 50 dB variable attenuation from DC-3 GHz under non-reflective conditions. This attenuator is recommended for fast response AGC circuits for commercial and high reliability applications. The AT002N5-10 is the gullwing version of this device for surface mount applications. Electrical Specifications at 25C Parameter1 Insertion Loss2 Frequency4 DC-1.0 GHz DC-2.0 GHz DC-3.0 GHz DC-1.0 GHz DC-2.0 GHz DC-3.0 GHz DC-1.0 GHz DC-2.0 GHz DC-3.0 GHz 50 48 45 Min. Typ. 1.2 1.4 1.7 55 52 48 1.2:1 1.4:1 1.6:1 1.3:1 1.5:1 1.8:1 Max. 1.4 1.8 2.0 Unit dB dB dB dB dB dB Attenuation Range VSWR (I/O) Operating Characteristics at 25C Parameter Switching Characteristics Condition Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Video Feedthru3 For All Attenuation Levels VLow = 0 to -0.2 V @ 20 A Max. VHigh = -5 V @ 100 A Max. 0.5-3 GHz 0.05 GHz Frequency Min. Typ. 10 15 20 0 -3 Max. Unit ns ns mV dBm dBm Input Power for 1 dB Compression Control Voltages 1. All measurements made in a 50 system, unless otherwise specified. 2. Insertion loss changes by 0.003 dB/C. 3. Video feedthru measured with 1 ns risetime pulse and 500 MHz bandwidth. 4. DC = 300 kHz. 5. See Quality/Reliability section. Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 9/99A 1 GaAs 50 dB IC Voltage Variable Dual Control Attenuator DC-3 GHz AT002N5-01, AT002N5-10 Typical Transfer Curve F = 1 GHz, VP1 = 3.5 V 0 60 50 dB 4 dB -1.0 50 V1 V2 Control Voltages (V) Attenuation (dB) 40 dB 2 dB 40 30 dB 1 dB 30 20 dB 0.5 dB 20 10 dB 0.2 dB 10 DC -2.0 -3.0 V1 (Series) V2 (Shunt) -4.0 -5.0 DC 10 20 30 40 50 60 1 2 3 Relative Attenuation (dB) Frequency (GHz) Relative Attenuation vs. Control Voltages 1. VP = FET pinchoff voltage Attenuation (By State) vs. Frequency PIN at 1.0 dB Compression (dBm) F = 500 MHz 20 15 10 5 0 -5 0 5 10 15 20 25 30 Absolute Maximum Ratings Characteristic RF Input Power (RF In) Control Voltage (VC) Operating Temperature (TOP) Storage Temperature (TST) Thermal Resistance (JC) Value 10 mW > 500 MHz 0/-8 V Control 4 mW 50 MHz -8 V Control +0.2 V, -10 V -55C to +125C -65C to +150C 25C/W -10 0.345 (8.76 mm) 0.010 (0.25 mm) 0.215 (5.46 mm) 0.080 (2.03 mm) TYP. 0.045 (1.14 mm) TYP. 0.063 (1.60 mm) TYP. 0.013 (0.33 mm) 0.007 (0.18 mm) 0.007 (0.18 mm) 0.003 (0.08 mm) 0.060 (1.52 mm) TYP. 0.385 (9.78 mm) 0.010 (0.25 mm) Attenuation (dB) Attenuation vs. 1.0 dB Compression Point Pin Out GND 0.268 (6.81 mm) 0.252 (6.40 mm) 0.130 (3.30 mm) TYP. 0.065 (1.65 mm) MAX. 0.029 (0.74 mm) TYP. J1 J2 0.030 (0.76 mm) 0.015 (0.038 mm) GND 2 Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 9/99A GND V2 V1 |
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